The Fe3Si thin film is a good candidate as ferromagnetic electrode in spintronics devices due to its high spin polarization and high Curie temperature. The use of Fe3Si in contact with a thin SiO2 barrier can have various applications in practical devices, such as magnetic tunnel junctions. We report on the synthesis of Fe3Si/SiO2 structures, in one vacuum cycle, by pulsed laser deposition and glow-discharge plasma oxidation followed by vacuum annealing. The structural and morphological characterization of the Fe3Si/SiO2 stacks is performed by in-situ X-ray photoelectron spectroscopy and with atomic force microscopy. Using a Fe-57 tracer layer, conversion electron Mossbauer spectroscopy is performed at the Fe3Si/SiO2 interface, proving the formation of a ferromagnetic phase with no paramagnetic inclusions. Our experimental results indicate that the Fe3Si/SiO2 stack is a promising system for application in spintronics devices. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and characterization of Fe3Si/SiO2 structures for spintronics

Mantovan R;Fanciulli M;
2008

Abstract

The Fe3Si thin film is a good candidate as ferromagnetic electrode in spintronics devices due to its high spin polarization and high Curie temperature. The use of Fe3Si in contact with a thin SiO2 barrier can have various applications in practical devices, such as magnetic tunnel junctions. We report on the synthesis of Fe3Si/SiO2 structures, in one vacuum cycle, by pulsed laser deposition and glow-discharge plasma oxidation followed by vacuum annealing. The structural and morphological characterization of the Fe3Si/SiO2 stacks is performed by in-situ X-ray photoelectron spectroscopy and with atomic force microscopy. Using a Fe-57 tracer layer, conversion electron Mossbauer spectroscopy is performed at the Fe3Si/SiO2 interface, proving the formation of a ferromagnetic phase with no paramagnetic inclusions. Our experimental results indicate that the Fe3Si/SiO2 stack is a promising system for application in spintronics devices. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
2008
INFM
MOSSBAUER-SPECTROSCOPY
TUNNEL-JUNCTIONS
SILICON
FILMS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/124828
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