Hafnium(IV) oxide thin films were synthesized by Atomic Layer Deposition (ALD) on Si(100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf(NEtMe)2(EtMeNC(NiPr)2)2]. In the present work, our attention is focused on a detailed XPS characterization of a representative HfO2 coating grown at 350 °C. Beside the wide scan spectrum, detailed spectra for the O1s, Hf4f, Hf4d and C1s regions and related data are presented and discussed. The obtained results point out to the formation of HfO2 coatings characterized by the presence of -OH groups, whose main origin is attributed to the use of water as oxidizing agent during the preparation process.
Hafnium oxide thin films grown by ALD: An XPS study
BARRECA, DAVIDE
2007
Abstract
Hafnium(IV) oxide thin films were synthesized by Atomic Layer Deposition (ALD) on Si(100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf(NEtMe)2(EtMeNC(NiPr)2)2]. In the present work, our attention is focused on a detailed XPS characterization of a representative HfO2 coating grown at 350 °C. Beside the wide scan spectrum, detailed spectra for the O1s, Hf4f, Hf4d and C1s regions and related data are presented and discussed. The obtained results point out to the formation of HfO2 coatings characterized by the presence of -OH groups, whose main origin is attributed to the use of water as oxidizing agent during the preparation process.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
