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An easy and reproducible procedure to grow pure and mixed phase Bi2O3 films from triphenyl bismuth on SiO2/Si(100) and Al2O3 by MOCVD is presented. The elemental composition of the films is determined by XPS, the surface morphology by AFM and the phase composition by XRD. For the samples deposited on SiO2/Si(100) FT-IR spectroscopy is demonstrated useful for a preliminary examination of the phases.

Metal Organic Chemical Vapor Deposition of Bi2O3 thin films from triphenyl bismuth

BARRECA, DAVIDE
1996

Abstract

An easy and reproducible procedure to grow pure and mixed phase Bi2O3 films from triphenyl bismuth on SiO2/Si(100) and Al2O3 by MOCVD is presented. The elemental composition of the films is determined by XPS, the surface morphology by AFM and the phase composition by XRD. For the samples deposited on SiO2/Si(100) FT-IR spectroscopy is demonstrated useful for a preliminary examination of the phases.
1996
Inglese
Edito da S. Daolio, E. Tondello, P.A. Vigato; Albignasego (PD), 1996
SYNTHESES AND METHODOLOGIES IN INORGANIC CHEMISTRY - New Compounds and Materials
6th Meeting on Syntheses and Methodologies in Inorganic Chemistry
243
250
8
18-21 Dicembre 1995
Bressanone (BZ)
1
none
Barreca, Davide
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/127187
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