Chemical Vapor Deposition on Alpha-Al2O3, SiO2/Si(100) and Ti was used to grow nanocrystalline Ru and RuO2 thin films at temperatures as low as 300°C using a new precursor of formula Ru(COD)(eta3-allyl)2. Film composition could be suitably tailored by variations of the growth atmosphere from pure N2 to O2. The compositional and microstructural features of the samples were analyzed by XPS, XRD and Raman Spectroscopy, while in-depth analysis of the coatings was performed by SIMS. The surface morphology and its dependence on thje growth surface were studied by AFM. Preliminary electrochemical tests were performed on RuO2/Ti layers in aqueous media. Some results obtained by SIMS analyses before and after O2 evolution on the electrode films are presented and discussed.
A novel CVD approach to Ru and RuO2 thin films as electrode materials
DAOLIO, SERGIO;FABRIZIO, MONICA;BARRECA, DAVIDE
1999
Abstract
Chemical Vapor Deposition on Alpha-Al2O3, SiO2/Si(100) and Ti was used to grow nanocrystalline Ru and RuO2 thin films at temperatures as low as 300°C using a new precursor of formula Ru(COD)(eta3-allyl)2. Film composition could be suitably tailored by variations of the growth atmosphere from pure N2 to O2. The compositional and microstructural features of the samples were analyzed by XPS, XRD and Raman Spectroscopy, while in-depth analysis of the coatings was performed by SIMS. The surface morphology and its dependence on thje growth surface were studied by AFM. Preliminary electrochemical tests were performed on RuO2/Ti layers in aqueous media. Some results obtained by SIMS analyses before and after O2 evolution on the electrode films are presented and discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
