Hybrid silica-based SiOxCyHz thin films were deposited via plasma enhanced-chemical vapor deposition PE-CVD on SiO2, Si100 and Cu substrates starting from tetramethoxysilane TMOS as precursor compound. Depositions were performed from Ar/TMOS plasmas in the absence of oxidizing gases at temperatures as low as 60 °C. In particular, the dependence of the system composition, structure, morphology and optical properties on the applied rf-power from 20 to 80 W was investigated in detail. This work is devoted to the XPS x-ray photoelectron spectroscopy characterization of a representative SiOxCyHz thin film supported on Sil00 and synthesized at 80 W, with particular regard to the origin of the organic residuals incorporated in the obtained hybrid material.
Silica-based thin films by PE-CVD: an XPS characterization
BARRECA, DAVIDE
2006
Abstract
Hybrid silica-based SiOxCyHz thin films were deposited via plasma enhanced-chemical vapor deposition PE-CVD on SiO2, Si100 and Cu substrates starting from tetramethoxysilane TMOS as precursor compound. Depositions were performed from Ar/TMOS plasmas in the absence of oxidizing gases at temperatures as low as 60 °C. In particular, the dependence of the system composition, structure, morphology and optical properties on the applied rf-power from 20 to 80 W was investigated in detail. This work is devoted to the XPS x-ray photoelectron spectroscopy characterization of a representative SiOxCyHz thin film supported on Sil00 and synthesized at 80 W, with particular regard to the origin of the organic residuals incorporated in the obtained hybrid material.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
