Deposition of silicon-germanium (a-SiGe:H,F) and of silicon-carbon (a-SiC:H,F) alloys has been obtained starting from SiF4-GeH4-H2 and SiF4-CH4-H2, respectively. The use of SiF4 as silicon source alternative to SiH4 causes positive modifications in both growth process and material properties, especially under plasma modulation conditions.
On the use of SiF4 as silicon source for amorphous silicon alloys deposition
G Cicala;
1995
Abstract
Deposition of silicon-germanium (a-SiGe:H,F) and of silicon-carbon (a-SiC:H,F) alloys has been obtained starting from SiF4-GeH4-H2 and SiF4-CH4-H2, respectively. The use of SiF4 as silicon source alternative to SiH4 causes positive modifications in both growth process and material properties, especially under plasma modulation conditions.File in questo prodotto:
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