The multilayer structure of mc-Si:H films deposited from SiF4 plasma system has been investigated by spectroscopic ellipsometry (SE), standard Constant Photocurrent Method (s-CPM) and dark conductivity measurements. The comparison of the electrical and optical properties of these samples with mc-Si:H films grown by sylane has been also carried out.
Microcrystalline Silicon, Deposited from SiF4 plasmas: Film anatomy from electrical and optical properties.
M Ambrico;G Cicala;M Losurdo;
2000
Abstract
The multilayer structure of mc-Si:H films deposited from SiF4 plasma system has been investigated by spectroscopic ellipsometry (SE), standard Constant Photocurrent Method (s-CPM) and dark conductivity measurements. The comparison of the electrical and optical properties of these samples with mc-Si:H films grown by sylane has been also carried out.File in questo prodotto:
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