The influence of crystal defects formed upon annealing in determining the anomalous distribution of Fe implanted into InP has been studied by comparing samples submitted to single Fe implant and double Fe + P implant in the MeV energy range. It is shown that end of range dislocation loops, as well as interfaces of bands of defects, are preferential sites for gettering and accumulation of Fe.
Influence of the dislocation loops on the anomalous diffusion of Fe implanted into InP
C Frigeri;G Rossetto
1997
Abstract
The influence of crystal defects formed upon annealing in determining the anomalous distribution of Fe implanted into InP has been studied by comparing samples submitted to single Fe implant and double Fe + P implant in the MeV energy range. It is shown that end of range dislocation loops, as well as interfaces of bands of defects, are preferential sites for gettering and accumulation of Fe.File in questo prodotto:
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Descrizione: Influence of the dislocation loops on the anomalous diffusion of Fe implanted into InP
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