Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In content on Vicinal Substrates

The effect of substrate misorientation on the layers uniformity and dislocation formation in InGaAs SQWs are studied by comparing layers grown on vicinal and nominal GaAs substrates with different In content and thickness. Lauers grown on vicinal substrates have a much higher density of misfit and threating dislocations and dislocation loopes bowing into the substrate. They also exhibit large terraces at the GaAs-on-InGaAs interfaces with associated lateral and vertical compositional inhomogeneity that depends on the In content. Such inhomogeneity may also favour generation of dislocatins inside the well.