InP implanted with 200 keV Fe ions to a dose of 1 x 10(14) atoms/cm(2) has been investigated by Transmission Electron Microscopy (TEM). The as-implanted sample exhibits an amorphous surface region. At the annealing temperature of 650 degrees C, nearly complete solid-phase epitaxial regrowth is achieved only for annealing times greater than 1.5 h. For annealing times up to 2 h. however, the samples still contain extended defects such as stacking-fault tetrahedra of vacancy-type and dislocation loops of interstitial-type, mostly concentrated in a band which corresponds to the region of transition between amorphous top layer and crystalline substrate, as was detected in the as-implanted sample. Stacking-fault tetrahedra and loops have also been observed above and below this band, respectively. The origin of these defects is discussed.
Electron-microscopy study of Fe-implanted InP
C Frigeri;
1996
Abstract
InP implanted with 200 keV Fe ions to a dose of 1 x 10(14) atoms/cm(2) has been investigated by Transmission Electron Microscopy (TEM). The as-implanted sample exhibits an amorphous surface region. At the annealing temperature of 650 degrees C, nearly complete solid-phase epitaxial regrowth is achieved only for annealing times greater than 1.5 h. For annealing times up to 2 h. however, the samples still contain extended defects such as stacking-fault tetrahedra of vacancy-type and dislocation loops of interstitial-type, mostly concentrated in a band which corresponds to the region of transition between amorphous top layer and crystalline substrate, as was detected in the as-implanted sample. Stacking-fault tetrahedra and loops have also been observed above and below this band, respectively. The origin of these defects is discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
