La-doped ZrO2 thin films were grown by O3-based atomic layer deposition on III-V (GaAs, In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.
Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs, In0.15Ga0.85As) substrates
Alessandro Molle;Marco Fanciulli;Sabina Spiga
2009
Abstract
La-doped ZrO2 thin films were grown by O3-based atomic layer deposition on III-V (GaAs, In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.File in questo prodotto:
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