After a review of a recent model of interpretation of the EBIC contrast at extended defects and of the most used gettering procedures, the paper illustrates how EBIC can be used to study gettering phenomena in silicon. The potentiality of EBIC to get quantitative information on some gettering processes, like internal and p+ gettering as well as poly-Si gettering, is demonstrated. It is shown that by using EBIC it is possible to establish which is the contaminant and the range of its initial density in not-intentionally contaminated epi Si. This is achieved by comparing the features of internal gettering, as determined by EBIC, to those of p+ gettering.
EBIC as a tool for the study of gettering phenomena in Silicon
Frigeri C
2008
Abstract
After a review of a recent model of interpretation of the EBIC contrast at extended defects and of the most used gettering procedures, the paper illustrates how EBIC can be used to study gettering phenomena in silicon. The potentiality of EBIC to get quantitative information on some gettering processes, like internal and p+ gettering as well as poly-Si gettering, is demonstrated. It is shown that by using EBIC it is possible to establish which is the contaminant and the range of its initial density in not-intentionally contaminated epi Si. This is achieved by comparing the features of internal gettering, as determined by EBIC, to those of p+ gettering.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
