Wafer level accelerated tests are very attractive to characterize the reliability of Cu metallizations. In this work we deal with the isothermal electromigration test, introducing all the recent recommendations for a correct temperature determination, which is crucial for Cu-damascene structures. Also, we propose a procedure for an optimal convergence to the stress temperature. Promising results are shown.
An improved isothermal electromigration test for Cu-damascene characterization
Impronta M;Scorzoni A
2004
Abstract
Wafer level accelerated tests are very attractive to characterize the reliability of Cu metallizations. In this work we deal with the isothermal electromigration test, introducing all the recent recommendations for a correct temperature determination, which is crucial for Cu-damascene structures. Also, we propose a procedure for an optimal convergence to the stress temperature. Promising results are shown.File in questo prodotto:
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