The solid solubility of As in silicon, the ionisation equilibria at different dopant concentrations and temperatures and the algorithms that describe these phenomena are reviewed and discussed. Experimental evidence of the occurrence of different types of clusters is presented. The correlation of clustering equilibria with As diffusivity is shown by suitable experiments. Finally we report and discuss the kinetics of As deactivation and the influence of excess point defects on the clustering process.

Features of arsenic clusters in silicon

Solmi S
2005

Abstract

The solid solubility of As in silicon, the ionisation equilibria at different dopant concentrations and temperatures and the algorithms that describe these phenomena are reviewed and discussed. Experimental evidence of the occurrence of different types of clusters is presented. The correlation of clustering equilibria with As diffusivity is shown by suitable experiments. Finally we report and discuss the kinetics of As deactivation and the influence of excess point defects on the clustering process.
2005
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/1401
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