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SOLMI, SANDRO

SOLMI, SANDRO  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 86 (tempo di esecuzione: 0.029 secondi).
Titolo Data di pubblicazione Autore(i) File
A NOVEL PD-SINXOY HYDROGEN SENSOR OF HIGH-STABILITY AND SENSITIVITY 1-gen-1991 Camanzi, A; Colilli, R; Pelacani, A; Severi, M; Solmi, S; Maccagnani, P
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 1-gen-2010 Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 1-gen-2007 Canino, M; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 1-gen-2006 Canino M; .Giannazzo F.; Roccaforte F.; Poggi A.; Solmi S.; Nipoti R.
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 1-gen-2007 Canino, Mc; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1-gen-2009 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1-gen-2009 Pintile, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, B G
Arsenic uphill diffusion during shallow junction formation 1-gen-2006 Ferri, M; Solmi, S; Parisini, A; Bersani, M; Giubertoni, D; Barozzi, M
Behaviour of low energy As ions implanted in Si through a thin oxide layer 1-gen-2004 Ferri, M; Parisini, A; Solmi, S; Bersani, M; Giubertoni, D; Barozzi, M
Boron pile-up phenomena during ultra shallow junction formation 1-gen-2007 Ferri M; Solmi S; Giubertoni D; Bersani M; Hamilton JJ; Kah M; Cowern NEB; Kirkby K; Collart EJH
Boron-Interstitial cluster kinetics: extraction of binding energies from dedicated experiments 1-gen-2004 Ortiz, Cj; Pichler, P; Haublein, V; Mannino, G; Scalese, S; Privitera, V; Solmi, S; Lerch, W
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 1-gen-2004 Poggi, A; Nipoti, R; Solmi, S; Bersani, M; Vanzetti, L
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 1-gen-2003 Poggi A.; Nipoti R.; Solmi S.; Bersani M; Vanzetti L.
Characterization of MOS capacitors fabricated on n-type 4H-SiC 1-gen-2006 Poggi A.; Moscatelli F.; Hijikata Y.; Solmi S.; Sanmartin M.; Tamarri F.; Nipoti R.
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 1-gen-2007 Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 1-gen-2007 Poggi; Antonella;Moscatelli; Francesco;Hijikata; Yasuto;Solmi; Sandro;Sanmartin; Michele;Tamarri; Fabrizio;Nipoti; Roberta
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 1-gen-2009 Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Cristiani, S; Sanmartin, M
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells 1-gen-2011 Armigliato, A; Nobili, D; Solmi, S; Blendin, G; Schum, B; Lachowicz, A; Horzel, J
Clustering equilibrium and deactivation kinetics in arsenic doped silicon 1-gen-2001 Nobili, D; Solmi, S; Shao, J
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 1-gen-1983 Lulli, Giorgio; Merli, PIER GIORGIO; Negrini, Paolo; Ostoja, Paolo; Solmi, Sandro