SOLMI, SANDRO
SOLMI, SANDRO
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Bologna
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires
2015 Suriano F;Ferri M;Moscatelli F;Mancarella F;Belsito L;Solmi S;Roncaglia A;Frabboni S;Gazzadi; G C;Narducci; D
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires
2013 Suriano, F; Ferri, M; Moscatelli, F; Mancarella, F; Belsito, L; Solmi, S; Roncaglia, A; Narducci, D
Fabrication and Thermoelectric Characterization of Surface-Micromachined Silicon Nanowires
2012 M. Ferri; F. Suriano; F. Mancarella; L. Belsito; S. Solmi; A. Roncaglia; D. Narducci; G. Cerofolini
Phonon scattering enhancement in Si nanolayers
2012 D. Narducci; G. Cerofolini; M. Ferri; F. Suriano; F. Mancarella; L. Belsito; S. Solmi; A. Roncaglia
Phonon scattering enhancement in silicon nanolayers
2012 Narducci, Dario; Cerofolini, Gianfranco; Ferri, Matteo; Suriano, Francesco; Mancarella, Fulvio; Belsito, Luca; Solmi, Sandro; Roncaglia, Alberto
Thermoelectric properties of p and n-type nanocrystalline silicon nanowires with high doping levels
2012 Suriano, F; Ferri, M; Solmi, S; Belsito, L; Roncaglia, A; Romano, E; Narducci, D; Cerofolini, ; G,
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells
2011 Armigliato, A; Nobili, D; Solmi, S; Blendin, G; Schum, B; Lachowicz, A; Horzel, J
Crossbar architecture for tera scale integration
2011 Cerofolini GF; Ferri M; Romano E; Suriano F; Veronese GP; Solmi S; Narducci D
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states
2011 Pintilie, I; Moscatell, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, L S; Svensson, B G
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface
2011 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, L S; Svensson, B G
Ultradense silicon nanowire arrays produced via top-down planar technology
2011 Ferri M; Suriano F; Roncaglia A; Solmi S; Cerofolini GF; Romano E; Narducci D .
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
2010 Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel
2010 Poggi A Moscatelli F; Solmi S; Armigliato A; Belsito L; Nipoti R;
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators
2010 Cerofolini, Gf; Ferri, M; Romano, E; Roncaglia, A; Selezneva, E; Arcari, A; Suriano, F; Veronese, Gp; Solmi, S; Narducci, D
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, Luca; L,
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability
2010 Poggi, A; Moscatelli, F; Solmi, S; Nipoti, Roberta; R,
Passivation by N implantation of the SiO2 /SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability
2010 Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R
Realizzazione di nanofili di Si mediante processo top-down di crescita templata di poly-Si su wafer di Si, per applicazioni termoelettriche
2010 G.F. Cerofolini; M. Ferri; A. Roncaglia; F. Suriano; S. Solmi; D.Narducci
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires
2010 Cerofolini, G F; Ferri, M; Romano, E; Suriano, F Veronese GP; Solmi, S; Narducci, D
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires | 1-gen-2015 | Suriano F;Ferri M;Moscatelli F;Mancarella F;Belsito L;Solmi S;Roncaglia A;Frabboni S;Gazzadi; G C;Narducci; D | |
| Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires | 1-gen-2013 | Suriano, F; Ferri, M; Moscatelli, F; Mancarella, F; Belsito, L; Solmi, S; Roncaglia, A; Narducci, D | |
| Fabrication and Thermoelectric Characterization of Surface-Micromachined Silicon Nanowires | 1-gen-2012 | M. Ferri; F. Suriano; F. Mancarella; L. Belsito; S. Solmi; A. Roncaglia; D. Narducci; G. Cerofolini | |
| Phonon scattering enhancement in Si nanolayers | 1-gen-2012 | D. Narducci; G. Cerofolini; M. Ferri; F. Suriano; F. Mancarella; L. Belsito; S. Solmi; A. Roncaglia | |
| Phonon scattering enhancement in silicon nanolayers | 1-gen-2012 | Narducci, Dario; Cerofolini, Gianfranco; Ferri, Matteo; Suriano, Francesco; Mancarella, Fulvio; Belsito, Luca; Solmi, Sandro; Roncaglia, Alberto | |
| Thermoelectric properties of p and n-type nanocrystalline silicon nanowires with high doping levels | 1-gen-2012 | Suriano, F; Ferri, M; Solmi, S; Belsito, L; Roncaglia, A; Romano, E; Narducci, D; Cerofolini, ; G, | |
| Characterization of the PSG/Si interface of H3PO4 doping process for solar cells | 1-gen-2011 | Armigliato, A; Nobili, D; Solmi, S; Blendin, G; Schum, B; Lachowicz, A; Horzel, J | |
| Crossbar architecture for tera scale integration | 1-gen-2011 | Cerofolini GF; Ferri M; Romano E; Suriano F; Veronese GP; Solmi S; Narducci D | |
| Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states | 1-gen-2011 | Pintilie, I; Moscatell, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, L S; Svensson, B G | |
| The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface | 1-gen-2011 | Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, L S; Svensson, B G | |
| Ultradense silicon nanowire arrays produced via top-down planar technology | 1-gen-2011 | Ferri M; Suriano F; Roncaglia A; Solmi S; Cerofolini GF; Romano E; Narducci D . | |
| Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation | 1-gen-2010 | Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG | |
| Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel | 1-gen-2010 | Poggi A Moscatelli F; Solmi S; Armigliato A; Belsito L; Nipoti R; | |
| Industrially Scalable Process for Silicon Nanowires for Seebeck Generators | 1-gen-2010 | Cerofolini, Gf; Ferri, M; Romano, E; Roncaglia, A; Selezneva, E; Arcari, A; Suriano, F; Veronese, Gp; Solmi, S; Narducci, D | |
| Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs | 1-gen-2010 | Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, Luca; L, | |
| Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs | 1-gen-2010 | Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L | |
| Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability | 1-gen-2010 | Poggi, A; Moscatelli, F; Solmi, S; Nipoti, Roberta; R, | |
| Passivation by N implantation of the SiO<inf>2</inf>/SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability | 1-gen-2010 | Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R | |
| Realizzazione di nanofili di Si mediante processo top-down di crescita templata di poly-Si su wafer di Si, per applicazioni termoelettriche | 1-gen-2010 | G.F. Cerofolini; M. Ferri; A. Roncaglia; F. Suriano; S. Solmi; D.Narducci | |
| Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires | 1-gen-2010 | Cerofolini, G F; Ferri, M; Romano, E; Suriano, F Veronese GP; Solmi, S; Narducci, D |