Amorphous to nanocrystalline transition is observed in the deposition of silicon films fiom SiF4-H2-He plasmas. The He-dilution favours the formation of nanocrystalline phase and affects the growth kinetics. Optical emission spectroscopy (OES) has revealed as a good diagnostics to fingerprint the process.
Effect of He-dilution on hydrofluorinated silicon films from SiF4-H2 plasmas
G Cicala;
1997
Abstract
Amorphous to nanocrystalline transition is observed in the deposition of silicon films fiom SiF4-H2-He plasmas. The He-dilution favours the formation of nanocrystalline phase and affects the growth kinetics. Optical emission spectroscopy (OES) has revealed as a good diagnostics to fingerprint the process.File in questo prodotto:
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