Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the FinFET architecture are demonstrated
Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices
Lombardo S;Corso D;Bongiorno C;Garozzo C;Puglisi R;
2007
Abstract
Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the FinFET architecture are demonstratedFile in questo prodotto:
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