The role of the heating rate in the postimplantation annealing process of SiC was investigated. Structural and electrical properties of an Al+ implanted junction in n-type 4H-SiC were studied for a 30 min annealing at 1600 degrees C in argon atmosphere and changing the heating rate between 7 and 40 degrees C/s. With the increasing of the heating rate the surface roughness increases, but the electrical performance of the devices improves. In particular, the faster ramp-up rate reduces the sheet resistance of the implanted layer of about 40% with respect to the slowest process and significantly reduces the leakage current of the diodes. (c) 2006 American Institute of Physics.
Effects of heating ramp rates on the characteristics of AI implanted 4H-SiC junctions
Nipoti R;
2006
Abstract
The role of the heating rate in the postimplantation annealing process of SiC was investigated. Structural and electrical properties of an Al+ implanted junction in n-type 4H-SiC were studied for a 30 min annealing at 1600 degrees C in argon atmosphere and changing the heating rate between 7 and 40 degrees C/s. With the increasing of the heating rate the surface roughness increases, but the electrical performance of the devices improves. In particular, the faster ramp-up rate reduces the sheet resistance of the implanted layer of about 40% with respect to the slowest process and significantly reduces the leakage current of the diodes. (c) 2006 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
