The effects of the laser irradiation on metal-oxide-semiconductor structures are investigated by means of a phase-field methodology. We numerically solved the model equations in one- and two-dimensional structures also containing SiO2/amorphous-Si/crystalline-Si stacks. The simulated laser annealing processes are discussed in detail, pointing out the influence of the geometrical constraints on the irradiation effects in the samples. The simulation results are compared with the experimental two-dimensional delineation of dopant profiles. These comparisons show the importance of the joint theoretical and experimental investigations in order to fully understand the phenomena occurring in submicron sized laser irradiated structures.
Materials modifications induced by laser annealing in two-dimensional structures
La Magna A;Alippi P;Privitera V;Scalese S;Pannitteri S;Fortunato G;Mariucci L;
2004
Abstract
The effects of the laser irradiation on metal-oxide-semiconductor structures are investigated by means of a phase-field methodology. We numerically solved the model equations in one- and two-dimensional structures also containing SiO2/amorphous-Si/crystalline-Si stacks. The simulated laser annealing processes are discussed in detail, pointing out the influence of the geometrical constraints on the irradiation effects in the samples. The simulation results are compared with the experimental two-dimensional delineation of dopant profiles. These comparisons show the importance of the joint theoretical and experimental investigations in order to fully understand the phenomena occurring in submicron sized laser irradiated structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
