Cobalt disilicide is now replacing titanium in the silicon technology to form highly conductive narrow lines on the gate stack of modern Metal-Oxide-Semiconductor devices (MOS). Nevertheless, further scaling down of device dimensions is giving as a critical concern the consumption of silicon on the active area and the process window for the silicide to be formed1. Silicides formed by Co/Ni/Si reaction are the future challenge for CMOS technology due to the low thermal budget and the expected lower silicon consumption with respect to conventional systems. Nevertheless, in largely scaled systems compared to what is known on thick Co/Ni bilayers, phase transformation could return to be a main concern. In this work we studied the phase transition of Co/Ni thin films on amorphous silicon using a novel approach based on in situ sheet resistance analyses during isothermal annealing processes, and on ex-situ microscopy analyses using Energy Filtered Transmission Electron Microscopy (EFTEM) and Selected Area Electron Diffraction (SAED).
High resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition
Alberti A;Bongiorno C;La Via F;
2003
Abstract
Cobalt disilicide is now replacing titanium in the silicon technology to form highly conductive narrow lines on the gate stack of modern Metal-Oxide-Semiconductor devices (MOS). Nevertheless, further scaling down of device dimensions is giving as a critical concern the consumption of silicon on the active area and the process window for the silicide to be formed1. Silicides formed by Co/Ni/Si reaction are the future challenge for CMOS technology due to the low thermal budget and the expected lower silicon consumption with respect to conventional systems. Nevertheless, in largely scaled systems compared to what is known on thick Co/Ni bilayers, phase transformation could return to be a main concern. In this work we studied the phase transition of Co/Ni thin films on amorphous silicon using a novel approach based on in situ sheet resistance analyses during isothermal annealing processes, and on ex-situ microscopy analyses using Energy Filtered Transmission Electron Microscopy (EFTEM) and Selected Area Electron Diffraction (SAED).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
