We propose a comparison among different solutions for realizing polysilicon thermoelectric transducers, with five different types of thermoelements based on Al/polysilicon and two level polysilicon design, using different doping (of p and n-type) for the poly layers. The device performances are evaluated on a test geometry with electrical measurements and the performance obtained with the various solutions are compared.

A comparison among different technological processes for the fabrication of polysilicon-based thermoelectric transducers

Mancarella F;Roncaglia A;Tamarri F;Elmi I;Cardinali GC;Severi M
2006

Abstract

We propose a comparison among different solutions for realizing polysilicon thermoelectric transducers, with five different types of thermoelements based on Al/polysilicon and two level polysilicon design, using different doping (of p and n-type) for the poly layers. The device performances are evaluated on a test geometry with electrical measurements and the performance obtained with the various solutions are compared.
2006
Istituto per la Microelettronica e Microsistemi - IMM
1-4244-0376-6
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/145525
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