Nanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical VaporDeposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150-300°C either inAr or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substratetemperature and O2 content on coating characteristics. Film microstructure as a function of thesynthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) andTransmission Electron Microscopy (TEM), while surface morphology was analyzed by AtomicForce Microscopy (AFM). Surface and in-depth chemical composition was studied by X-rayPhotoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).
Initial growth stages of CeO2 nanosystems by Plasma-Enhanced chemical vapor deposition
D Barreca;A Gasparotto;G Bruno;M Losurdo
2003
Abstract
Nanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical VaporDeposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150-300°C either inAr or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substratetemperature and O2 content on coating characteristics. Film microstructure as a function of thesynthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) andTransmission Electron Microscopy (TEM), while surface morphology was analyzed by AtomicForce Microscopy (AFM). Surface and in-depth chemical composition was studied by X-rayPhotoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
