Si nanocrystal FINFLASH memory cells were realized on SOI substrates. Ultra-scaled devices down to 20 nm fin width exhibit excellent program / erase characteristics at low voltage. The main results are shown and discussed.
Program / erase characteristics of ultra-scaled Si Nanocrystal FINFLASH memories
Lombardo S;Corso D;Bongiorno C;
2007
Abstract
Si nanocrystal FINFLASH memory cells were realized on SOI substrates. Ultra-scaled devices down to 20 nm fin width exhibit excellent program / erase characteristics at low voltage. The main results are shown and discussed.File in questo prodotto:
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