Liquid phase epitaxial regrowth following laser melting significantly modifies the concentration of point defects in Si, such that peculiar depth distribution of subsequently implanted B arises. At room temperature, a large fraction of B atoms, similar to15%, implanted in laser preirradiated Si, migrate up to the original melt depth. During high temperature annealing, the nonequilibrium diffusion of B is reduced to similar to25% of that measured in unirradiated Si. Both these phenomena are conclusively attributed to an excess of vacancies, induced in the lattice during solidification and to their interaction with impurities and dopant.
Depth distribution of B implanted in Si after excimer laser irradiation
Mannino G;Privitera V;La Magna A;Fortunato G;Mariucci L
2005
Abstract
Liquid phase epitaxial regrowth following laser melting significantly modifies the concentration of point defects in Si, such that peculiar depth distribution of subsequently implanted B arises. At room temperature, a large fraction of B atoms, similar to15%, implanted in laser preirradiated Si, migrate up to the original melt depth. During high temperature annealing, the nonequilibrium diffusion of B is reduced to similar to25% of that measured in unirradiated Si. Both these phenomena are conclusively attributed to an excess of vacancies, induced in the lattice during solidification and to their interaction with impurities and dopant.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
