Lanthanum oxide (La2O3) thin films have been prepared on Si(100) substrates through a sol-gel process from the lanthanum methoxyethoxide (La(OCH2CH2OCH3)(3)) precursor. To study the effects of different postdeposition treatments on film microstructure and optical properties, the as-deposited layers have been annealed at different temperatures between 200 and 700 degrees C in air or forming gas (H-2 10% in N-2) for 1 h. Low-temperature (300 C) remote O-2 plasma processing has also been applied to both as-deposited and previously annealed samples. Films have been fully characterized by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), glancing incidence X-ray diffraction (GIXRD), and atomic force microscopy (AFM). In particular, microstructure and optical properties correlations were accomplished by exploiting spectroscopic ellipsometric investigation. It has been found that thermal annealing at temperatures around 500 C leads to subcutaneous oxidation of the Si substrate resulting in the formation of a SiO2 layer, and annealing at higher temperature (700 C) also results in film-substrate intermixing and formation of a lanthanum silicate layer. At variance, these interfacial reactions can be suppressed by low-temperature (300 C) remote O-2 plasma processing of as-deposited films, and optical transparency in the visible range can be strongly improved.

Microstructural and Optical Properties Modifications Induced by Plasma and Annealing Treatments of Lanthanum Oxide Sol-Gel Thin Films

Armelao L;Bottaro G;Bruno G;Giangregorio MM;Losurdo M;Lo Nigro R;
2009

Abstract

Lanthanum oxide (La2O3) thin films have been prepared on Si(100) substrates through a sol-gel process from the lanthanum methoxyethoxide (La(OCH2CH2OCH3)(3)) precursor. To study the effects of different postdeposition treatments on film microstructure and optical properties, the as-deposited layers have been annealed at different temperatures between 200 and 700 degrees C in air or forming gas (H-2 10% in N-2) for 1 h. Low-temperature (300 C) remote O-2 plasma processing has also been applied to both as-deposited and previously annealed samples. Films have been fully characterized by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), glancing incidence X-ray diffraction (GIXRD), and atomic force microscopy (AFM). In particular, microstructure and optical properties correlations were accomplished by exploiting spectroscopic ellipsometric investigation. It has been found that thermal annealing at temperatures around 500 C leads to subcutaneous oxidation of the Si substrate resulting in the formation of a SiO2 layer, and annealing at higher temperature (700 C) also results in film-substrate intermixing and formation of a lanthanum silicate layer. At variance, these interfacial reactions can be suppressed by low-temperature (300 C) remote O-2 plasma processing of as-deposited films, and optical transparency in the visible range can be strongly improved.
2009
Istituto di Nanotecnologia - NANOTEC
Istituto per la Microelettronica e Microsistemi - IMM
File in questo prodotto:
File Dimensione Formato  
prod_169679-doc_56107.pdf

solo utenti autorizzati

Descrizione: Articolo Pubblicato
Dimensione 2.11 MB
Formato Adobe PDF
2.11 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/150598
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 20
social impact