We investigated the activation of B in Si by a millisecond annealing process performed by infrared laser annealing. Reference samples were annealed in a lamp based rapid thermal annealing system at 200 °C/s. We found that comparable diffusion length (25nm), the laser annealed samples show a Rs 430 ¿, corresponding to an active dose a factor two higher relative to lamp annealed samples. The laser annealing/activation process, lasting for just a few milliseconds, is likely characterized by the absence of B-interstitial clusters formation and precedes by far the regime known as "transient diffusion" with a duration of at least a few seconds at temperatures above 1000°C and which is driven by the formation/dissolution of large clusters involving B atoms.
Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing
Mannino G;La Magna A;Privitera V;
2007
Abstract
We investigated the activation of B in Si by a millisecond annealing process performed by infrared laser annealing. Reference samples were annealed in a lamp based rapid thermal annealing system at 200 °C/s. We found that comparable diffusion length (25nm), the laser annealed samples show a Rs 430 ¿, corresponding to an active dose a factor two higher relative to lamp annealed samples. The laser annealing/activation process, lasting for just a few milliseconds, is likely characterized by the absence of B-interstitial clusters formation and precedes by far the regime known as "transient diffusion" with a duration of at least a few seconds at temperatures above 1000°C and which is driven by the formation/dissolution of large clusters involving B atoms.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
