Bottom contact FET devices were realized, using vacuum evaporated thin films of unsubstituted quinquethiophene and two modified derivatives deposited at different substrate temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) data on thin films deposited in the same conditions are reported and related to the electrical characteristics of the devices.
FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes
Maccagnani P;Gazzano M;Cavallini M;Kengne JC;Melucci M;Zambianchi M;Barbarella G
2004
Abstract
Bottom contact FET devices were realized, using vacuum evaporated thin films of unsubstituted quinquethiophene and two modified derivatives deposited at different substrate temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) data on thin films deposited in the same conditions are reported and related to the electrical characteristics of the devices.File in questo prodotto:
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