Newly synthesized thiophene (T) and benzothiadiazole (B) co-oligomers of different size, alternation motifs, and alkyl substitution types are reported. Combined spectroscopic data, electrochemical analysis, and theoretical calculations show that the insertion of a single electron-deficient B unit into the aromatic backbone strongly affects the LUMO energy level. The insertion of additional B units has only a minor effect on the electronic properties. Cast films of oligomers with two alternated B rings (B-T-B inner core) display crystalline order. Bottom-contact FETs based on films cast on bare SiO2 show hole-charge mobilities of 1 x 10(-3)-5 x 10(-3) cm(2) V-1 s(-1) and I-on/I-off ratios of 10(5)-10(6). Solution-cast films of cyclohexyl-substituted compounds are amorphous and do not show FET behavior. However, the lack of order observed in these films can be overcome by nanorubbing and unconventional wet lithography, which allow for fine control of structural order in thin deposits.

Thiophene-benzothiadiazole co-oligomers: synthesis, optoelectronic properties, electrical characterization and thin film patterning

M Melucci;L Favaretto;M Cavallini;A Zanelli;P Maccagnani;G Barbarella
2010

Abstract

Newly synthesized thiophene (T) and benzothiadiazole (B) co-oligomers of different size, alternation motifs, and alkyl substitution types are reported. Combined spectroscopic data, electrochemical analysis, and theoretical calculations show that the insertion of a single electron-deficient B unit into the aromatic backbone strongly affects the LUMO energy level. The insertion of additional B units has only a minor effect on the electronic properties. Cast films of oligomers with two alternated B rings (B-T-B inner core) display crystalline order. Bottom-contact FETs based on films cast on bare SiO2 show hole-charge mobilities of 1 x 10(-3)-5 x 10(-3) cm(2) V-1 s(-1) and I-on/I-off ratios of 10(5)-10(6). Solution-cast films of cyclohexyl-substituted compounds are amorphous and do not show FET behavior. However, the lack of order observed in these films can be overcome by nanorubbing and unconventional wet lithography, which allow for fine control of structural order in thin deposits.
2010
Istituto per la Microelettronica e Microsistemi - IMM
Istituto per la Sintesi Organica e la Fotoreattivita' - ISOF
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
FIELD-EFFECT TRANSISTORS
SOLID-STATE PROPERTIES
ORGANIC ELECTRONICS;
OLIGOTHIOPHENES
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/154641
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