In this paper we report on recent results obtained from flash lamp annealing (FLA) for the formation of ultra-shallow junctions. Si(100) wafers were implanted at ultra-low energy (500 eV) with boron to a fluence of 10(15) ions/cm(2). FLA was carried out at temperatures of 1100 and 1200degreesC with a soak time of 20 ms. For comparison conventional rapid thermal annealing (RTA) was performed at 1100 and 1200degreesC. The boron diffusion and the dopant activation were investigated by secondary ion mass spectroscopy (SIMS) and spreading resistance profiling (SRP). The activated doses after FLA were as high as 20% of the implanted dose and confined in a layer of 60 nm. The sheet resistances were comparable to those after RTA treatment.
Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon
Mannino G;Privitera V;Napolitani E;
2002
Abstract
In this paper we report on recent results obtained from flash lamp annealing (FLA) for the formation of ultra-shallow junctions. Si(100) wafers were implanted at ultra-low energy (500 eV) with boron to a fluence of 10(15) ions/cm(2). FLA was carried out at temperatures of 1100 and 1200degreesC with a soak time of 20 ms. For comparison conventional rapid thermal annealing (RTA) was performed at 1100 and 1200degreesC. The boron diffusion and the dopant activation were investigated by secondary ion mass spectroscopy (SIMS) and spreading resistance profiling (SRP). The activated doses after FLA were as high as 20% of the implanted dose and confined in a layer of 60 nm. The sheet resistances were comparable to those after RTA treatment.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
