We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual one- and two-electron devices. The physical mechanisms reducing SO admixture are discussed, and numerical results for realistic weakly confined GaAs/AlGaAs dots are reported. (c) 2007 Elsevier B.V. AD rights reserved.
Spin relaxation due to spin-orbit coupling in multi-electron quantum dots
Andrea Bertoni;Guido Goldoni;Massimo Rontani;
2008
Abstract
We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual one- and two-electron devices. The physical mechanisms reducing SO admixture are discussed, and numerical results for realistic weakly confined GaAs/AlGaAs dots are reported. (c) 2007 Elsevier B.V. AD rights reserved.File in questo prodotto:
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