Modulation instability generated by mechanical frequencies in RF MEMS switches is predicted and its potential contribution to the RF signal degradation is discussed. In particular, evaluations have been performed for double clamped configurations in shunt capacitive devices. As a conclusion, it is evidenced the possibility for the excitation of satellites affecting as noise sources higher than -40 dB the spectral purity of microwave sources.
Modulation instability in RF MEMS devices
Marcelli;Bartolucci;Lucibello;Proietti;Ea
2012
Abstract
Modulation instability generated by mechanical frequencies in RF MEMS switches is predicted and its potential contribution to the RF signal degradation is discussed. In particular, evaluations have been performed for double clamped configurations in shunt capacitive devices. As a conclusion, it is evidenced the possibility for the excitation of satellites affecting as noise sources higher than -40 dB the spectral purity of microwave sources.File in questo prodotto:
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