A new synthetic route for the deposition of CoAl2O4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al(OiC3H7)4]2} is presented. Molecular properties of {Co[Al(OiC3H7)4]2} have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV-vis, and SIMS measurements.
MOCVD of CoAl2O4 Thin Films from {Co[Al(OiC3H7)4]2} as precursor
El Habra N;Crociani L;Zanella P;Rossetto G;Carta G;
2007
Abstract
A new synthetic route for the deposition of CoAl2O4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al(OiC3H7)4]2} is presented. Molecular properties of {Co[Al(OiC3H7)4]2} have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV-vis, and SIMS measurements.File in questo prodotto:
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Descrizione: MOCVD of CoAl2O4 thin films from {Co[Al((OC3H7)-C-i)(4)](2)} as precursor
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