In this communication we report the synthesis and characterization of the vanadium (III) alkoxide [V(OCMe(2)CH(2)OMe)(3)], which presents an appreciable volatility (55 degrees C/1.5 Torr), its successful use as MOCVD precursor for the deposition of pure VO(2) and V(2)O(5) films and the characterization of the films by means of Rutherford Backscattering Spectroscopy (RBS), X-Ray Diffraction (XRD) and Cyclic Voltammetry.
MOCVD of Vanadium Oxide Films with a Novel Vanadium(III) Precursor
Crociani L;Carta G;Natali M;Rossetto G
2011
Abstract
In this communication we report the synthesis and characterization of the vanadium (III) alkoxide [V(OCMe(2)CH(2)OMe)(3)], which presents an appreciable volatility (55 degrees C/1.5 Torr), its successful use as MOCVD precursor for the deposition of pure VO(2) and V(2)O(5) films and the characterization of the films by means of Rutherford Backscattering Spectroscopy (RBS), X-Ray Diffraction (XRD) and Cyclic Voltammetry.File in questo prodotto:
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