The beneficial effects of F implantation on the modification of extended defects in Si have been studied. Preamorphized Si samples were implanted with F (75 keV, 6x10(15) F/cm(2)) and regrown by solid phase epitaxy (SPE) at 700 degrees C. The formation, just after SPE, of a band of bubbles overlapping the F enriched region has been evidenced, clearly demonstrating the formation of F-vacancy (V) complexes with determined stoichiometry. Moreover, the authors demonstrate that these F-V complexes inhibit the formation of extended defects, acting as efficient traps for Si interstitials. These results represent a promising route toward point defects engineering in microelectronic application. (c) 2006 American Institute of Physics.
Evidences of F-induced nanobubbles as sink for self-interstitials in Si
Boninelli S;Impellizzeri G;Mirabella S;Priolo F;Napolitani E;
2006
Abstract
The beneficial effects of F implantation on the modification of extended defects in Si have been studied. Preamorphized Si samples were implanted with F (75 keV, 6x10(15) F/cm(2)) and regrown by solid phase epitaxy (SPE) at 700 degrees C. The formation, just after SPE, of a band of bubbles overlapping the F enriched region has been evidenced, clearly demonstrating the formation of F-vacancy (V) complexes with determined stoichiometry. Moreover, the authors demonstrate that these F-V complexes inhibit the formation of extended defects, acting as efficient traps for Si interstitials. These results represent a promising route toward point defects engineering in microelectronic application. (c) 2006 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
