B diffuses in crystalline Si by reacting with Si self-interstitial (I) with a frequency g, forming a BI complex that can migrate for an average length lambda. We experimentally measured both g and lambda as a function of the hole concentration p by means of iso-concentration experiments on B delta-layers both under p- and n-doping conditions. On the basis of these data, we propose a comprehensive model that fixes the interplay among free charge, I and BI charge states that determines the B diffusion. Pairing effect with donors was also considered. (C) 2007 Elsevier B.V. All rights reserved.
Iso-concentration study of atomistic mechanism of B diffusion in Si
De Salvador D;Napolitani E;Mirabella S;Impellizzeri G;Priolo F
2007
Abstract
B diffuses in crystalline Si by reacting with Si self-interstitial (I) with a frequency g, forming a BI complex that can migrate for an average length lambda. We experimentally measured both g and lambda as a function of the hole concentration p by means of iso-concentration experiments on B delta-layers both under p- and n-doping conditions. On the basis of these data, we propose a comprehensive model that fixes the interplay among free charge, I and BI charge states that determines the B diffusion. Pairing effect with donors was also considered. (C) 2007 Elsevier B.V. All rights reserved.File in questo prodotto:
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