Electronic stopping measurements of N14+ ions in silicon have been performed in the energy range between 0.7 MeV and 1.5 MeV. The experiments were made by transmission through thin (< 0.5-mu-m) Si single crystals both in random and <100>, <110> and <112> directions. In the energy range investigated the experimental data show a linear dependence of the stopping power on ion velocity. The effective charge, as evaluated by scaling the experimental stopping of tabulated hydrogen data, ranged from 2.5 to 3.5, in agreement with most theoretical evaluations.
Random and channeling stopping power of nitrogen in silicon in the 700-1500 keV range
RNipoti;
1991
Abstract
Electronic stopping measurements of N14+ ions in silicon have been performed in the energy range between 0.7 MeV and 1.5 MeV. The experiments were made by transmission through thin (< 0.5-mu-m) Si single crystals both in random and <100>, <110> and <112> directions. In the energy range investigated the experimental data show a linear dependence of the stopping power on ion velocity. The effective charge, as evaluated by scaling the experimental stopping of tabulated hydrogen data, ranged from 2.5 to 3.5, in agreement with most theoretical evaluations.File in questo prodotto:
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