MOCVD has been applied to the first successful deposition of CeO 2 ?100? oriented films on no-rolled Hastelloy C276. The presently found columnar grain morphologies have been related to the zone model proposed by Mochvan and Demchishin for physical vapor deposition processes. The fiber texture strongly depends on the deposition temperature.

Metal-organic chemical vapor deposition of CeO2 < 100 > oriented films on no-rolled Hastelloy C276

R Lo Nigro;
2001

Abstract

MOCVD has been applied to the first successful deposition of CeO 2 ?100? oriented films on no-rolled Hastelloy C276. The presently found columnar grain morphologies have been related to the zone model proposed by Mochvan and Demchishin for physical vapor deposition processes. The fiber texture strongly depends on the deposition temperature.
2001
Istituto per la Microelettronica e Microsistemi - IMM
THIN-FILMS
BUFFER LAYERS
MOCVD
CERIUM OXIDE
PRECURSORS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/173801
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