Ingots and wafers of semiinsulating Pe-doped InP were submitted to different thermal treatments. The influence that these treatments have on the electrical properties and the uniformity of the wafers was studied using several experimental techniques: Hall effect, chemical photoetching (DSL), Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). The optimal annealing conditions are discussed on the basis of these results.
Influence of the ingot and wafer annealing on the homogeneity of Fe-doped semi-insulating InP wafers
R Fornari;E Gilioli;
1997
Abstract
Ingots and wafers of semiinsulating Pe-doped InP were submitted to different thermal treatments. The influence that these treatments have on the electrical properties and the uniformity of the wafers was studied using several experimental techniques: Hall effect, chemical photoetching (DSL), Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). The optimal annealing conditions are discussed on the basis of these results.File in questo prodotto:
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