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FORNARI, ROBERTO

FORNARI, ROBERTO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 59 (tempo di esecuzione: 0.034 secondi).
Titolo Data di pubblicazione Autore(i) File
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 1-gen-1997 R. Fornari ; E. Gilioli ; G. Mignoni ;M. Masi
A study of In incorporation in InGaN layers grown by atmospheric pressure MOVPE 1-gen-2003 Bosi M.; Fornari R.
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers 1-gen-1996 R. Fornari; A. Zappettini; E. Gombia; R. Mosca; M. Curti
Assessment of the short and long range homogeneity of MOVPE-grown InGan epilayers 1-gen-2003 Fornari, R; Bosi, M; Avella, M; Martinez, O; Jimenez, J
Cathodoluminescence of undoped and Si-doped ?-Ga2O3 films 1-gen-2021 Montedoro, V; Torres, A; Dadgostar, S; Jimenez, J; Bosi, M; Parisini, A; Fornari, R
Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL 1-gen-2003 Bosi M.; Fornari R.; Scardova S.; Avella M.; Martinez O.; Jimenez J.
Complementary study of Indentation-induced dislocations in GaAs and InP by Photoetching, SEM, EBIC and SPL 1-gen-1993 J. L. Weyher; C. Frigeri; K. Schohe; S. K. Krawczyk; T. Wosinski;R. Fornari
Complementary study of Indentation-induced dislocations in GaAs and InP by Photoetching, SEM, SPL and EBIC 1-gen-1994 J. L. Weyher; C. Frigeri; K. Schohe; S. K. Krawczyk; T. Wosinski;R. Fornari
Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy 1-gen-2004 Bosi, M; Fornari, R; Scardova, S; Avella, M; Martinez, O; Jimenez, J
Correlation of crystal defects and galvanomagnetic parameters of semi-insulating inp with performance of radiation detectors fabricated from characterised materials 1-gen-2002 Bohacek P.; Korytar D.; Ferrari C.; Dubecky F.; Surma B.; Zat'Ko B.; Smatko V.; Huran J.; Fornari R.; Sekacova M.; Strzelecka S.
Crystal structure and ferroelectric properties of epsilon-Ga2O3 films grown on (0001)-sapphire 1-gen-2016 Mezzadri F.; Calestani G.; Boschi F.; Delmonte D.; Bosi M.; Fornari R.
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ?-Ga2O3 epilayers 1-gen-2022 Parisini A.; Bosio A.; von Bardeleben H.J.; Jimenez J.; Dadgostar S.; Pavesi M.; Baraldi A.; Vantaggio S.; Fornari R.
Determination of traces of Iron in Indium Phosphide by electro-thermal atomic absorption spectroscopy combined with solvent extraction 1-gen-2002 Taddia, M; Bagnoli, G; Cerroni, Mg; Fornari, R; Righetti, G
Effect of growth parameters on iron incorporation in semi-insulating LEC Indium Phosphide 1-gen-1996 R. Fornari; M. Moriglioni; M. Thirumavalavan; A. Zappettini; M. Curti; G. Mignoni;M. Locci
Effects of melt composition on deep electronic states and compensation ratios in n-type LEC gallium arsenide 1-gen-1989 Fornari R; Gombia E; Mosca; R
Effects of the melt composition on structural and electrical characteristics of bulk Gallim Arsenide 1-gen-1989 Fornari, R; Frigeri, C; Gleichmann, R; Gombia, E; Mosca, R
Effects of thermal annealing on gan epilayers deposited on (0001) sapphire 1-gen-2002 Bosi M.; Fornari R.; Armani N.
Electrical and optical properties of semi-insulating InP obtained by wafer and ingot annealing 1-gen-1997 A. Zappettini; R. Fornari; R. Capelletti
Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors 1-gen-2020 Stefano Leone; Roberto Fornari; Matteo Bosi; Vincenzo Montedoro; Lutz Kirste; Philipp Doering; Fouad Benkhelifa; Mario Prescher; Christian Manz; Vladimir Polyakov; Oliver Ambacher
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors 1-gen-2018 Pavesi, M; Fabbri, F; Boschi, F; Piacentini, G; Baraldi, A; Bosi, M; Gombia, E; Parisini, A; Fornari, R