FORNARI, ROBERTO
FORNARI, ROBERTO
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption
2024 Dittrich, T.; Parisini, A.; Pavesi, M.; Baraldi, A.; Sacchi, A.; Mezzadri, F.; Mazzolini, P.; Bosi, M.; Seravalli, L.; Bosio, A.; Fornari, R.
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
2024 Mazzolini, P.; Varley, J. B.; Parisini, A.; Sacchi, A.; Pavesi, M.; Bosio, A.; Bosi, M.; Seravalli, L.; Janzen, B. M.; Marggraf, M. N.; Bernhardt, N.; Wagner, M. R.; Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Kler, J.; De Souza, R. A.; Martin, M.; Mezzadri, F.; Borelli, C.; Fornari, R.
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors
2024 Esposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Rossi, Francesca; Fornari, Roberto; Fabbri, Filippo; Seravalli, Luca
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films
2024 Spaggiari, Giulia; Fornari, Roberto; Mazzolini, Piero; Mezzadri, Francesco; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Pattini, Francesco; Pavesi, Maura; Baraldi, Andrea; Rampino, Stefano; Sacchi, Anna; Bersani, Danilo
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates
2024 Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R,
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study
2023 Zolnai, Z.; Petrik, P.; Nemeth, A.; Volk, J.; Bosi, M.; Seravalli, L.; Fornari, R.
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3
2023 Rajabi Kalvani, P.; Parisini, A.; Sozzi, G.; Borelli, C.; Mazzolini, P.; Bierwagen, O.; Vantaggio, S.; Egbo, K.; Bosi, M.; Seravalli, L.; Fornari, R.
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors
2023 Girolami, Marco; Bosi, Matteo; Serpente, Valerio; Mastellone, Matteo; Seravalli, Luca; Pettinato, Sara; Salvatori, Stefano; Trucchi, DANIELE MARIA; Fornari, Roberto
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction
2023 Mazzolini, P.; Fogarassy, Z.; Parisini, A.; Mezzadri, F.; Diercks, D.; Bosi, M.; Seravalli, L.; Sacchi, A.; Spaggiari, G.; Bersani, D.; Bierwagen, O.; Janzen, B. M.; Marggraf, M. N.; Wagner, M. R.; Cora, I.; Pecz, B.; Tahraoui, A.; Bosio, A.; Borelli, C.; Leone, S.; Fornari, R.
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ?-Ga2O3 epilayers
2022 Parisini A.; Bosio A.; von Bardeleben H.J.; Jimenez J.; Dadgostar S.; Pavesi M.; Baraldi A.; Vantaggio S.; Fornari R.
Study of SnO/-Ga2O3p - N diodes in planar geometry
2022 Parisini, A.; Mazzolini, P.; Bierwagen, O.; Borelli, C.; Egbo, K.; Sacchi, A.; Bosi, M.; Seravalli, L.; Tahraoui, A.; Fornari, R.
Cathodoluminescence of undoped and Si-doped ?-Ga2O3 films
2021 Montedoro, V; Torres, A; Dadgostar, S; Jimenez, J; Bosi, M; Parisini, A; Fornari, R
n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion
2021 Bosio, A; Parisini, A; Lamperti, A; Borelli, C; Fornasini, L; Bosi, M; Cora, I; Fogarassy, Z; Pecs, B; Zolnai, Z; Nemeth, A; Vantaggio, S; Fornari, R
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy
2021 Bosi M.; Seravalli L.; Mazzolini P.; Mezzadri F.; Fornari R.
Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors
2020 Stefano Leone; Roberto Fornari; Matteo Bosi; Vincenzo Montedoro; Lutz Kirste; Philipp Doering; Fouad Benkhelifa; Mario Prescher; Christian Manz; Vladimir Polyakov; Oliver Ambacher
Ga(2)O(3)polymorphs: tailoring the epitaxial growth conditions
2020 Bosi, M; Mazzolini, P; Seravalli, L; Fornari, R
In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3
2020 Cora I.; Fogarassy, Z.; Fornari, R.; Bosi, M.; Recnik, A.; Pécz, B.
Gallium Oxide: A Rising Star in the Semiconductor Realm
2019 Bosi, Matteo; Fornari, Roberto
Progress in MOVPE growth of Ga2O3
2019 Fornari, Roberto; Fornari, Roberto
Si and Sn doping of epsilon-Ga2O3 layers
2019 Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption | 1-gen-2024 | Dittrich, T.; Parisini, A.; Pavesi, M.; Baraldi, A.; Sacchi, A.; Mezzadri, F.; Mazzolini, P.; Bosi, M.; Seravalli, L.; Bosio, A.; Fornari, R. | |
| Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments | 1-gen-2024 | Mazzolini, P.; Varley, J. B.; Parisini, A.; Sacchi, A.; Pavesi, M.; Bosio, A.; Bosi, M.; Seravalli, L.; Janzen, B. M.; Marggraf, M. N.; Bernhardt, N.; Wagner, M. R.; Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Kler, J.; De Souza, R. A.; Martin, M.; Mezzadri, F.; Borelli, C.; Fornari, R. | |
| Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors | 1-gen-2024 | Esposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Rossi, Francesca; Fornari, Roberto; Fabbri, Filippo; Seravalli, Luca | |
| Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films | 1-gen-2024 | Spaggiari, Giulia; Fornari, Roberto; Mazzolini, Piero; Mezzadri, Francesco; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Pattini, Francesco; Pavesi, Maura; Baraldi, Andrea; Rampino, Stefano; Sacchi, Anna; Bersani, Danilo | |
| Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates | 1-gen-2024 | Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R, | |
| Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study | 1-gen-2023 | Zolnai, Z.; Petrik, P.; Nemeth, A.; Volk, J.; Bosi, M.; Seravalli, L.; Fornari, R. | |
| Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 | 1-gen-2023 | Rajabi Kalvani, P.; Parisini, A.; Sozzi, G.; Borelli, C.; Mazzolini, P.; Bierwagen, O.; Vantaggio, S.; Egbo, K.; Bosi, M.; Seravalli, L.; Fornari, R. | |
| Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors | 1-gen-2023 | Girolami, Marco; Bosi, Matteo; Serpente, Valerio; Mastellone, Matteo; Seravalli, Luca; Pettinato, Sara; Salvatori, Stefano; Trucchi, DANIELE MARIA; Fornari, Roberto | |
| Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction | 1-gen-2023 | Mazzolini, P.; Fogarassy, Z.; Parisini, A.; Mezzadri, F.; Diercks, D.; Bosi, M.; Seravalli, L.; Sacchi, A.; Spaggiari, G.; Bersani, D.; Bierwagen, O.; Janzen, B. M.; Marggraf, M. N.; Wagner, M. R.; Cora, I.; Pecz, B.; Tahraoui, A.; Bosio, A.; Borelli, C.; Leone, S.; Fornari, R. | |
| Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ?-Ga2O3 epilayers | 1-gen-2022 | Parisini A.; Bosio A.; von Bardeleben H.J.; Jimenez J.; Dadgostar S.; Pavesi M.; Baraldi A.; Vantaggio S.; Fornari R. | |
| Study of SnO/-Ga2O3p - N diodes in planar geometry | 1-gen-2022 | Parisini, A.; Mazzolini, P.; Bierwagen, O.; Borelli, C.; Egbo, K.; Sacchi, A.; Bosi, M.; Seravalli, L.; Tahraoui, A.; Fornari, R. | |
| Cathodoluminescence of undoped and Si-doped ?-Ga2O3 films | 1-gen-2021 | Montedoro, V; Torres, A; Dadgostar, S; Jimenez, J; Bosi, M; Parisini, A; Fornari, R | |
| n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion | 1-gen-2021 | Bosio, A; Parisini, A; Lamperti, A; Borelli, C; Fornasini, L; Bosi, M; Cora, I; Fogarassy, Z; Pecs, B; Zolnai, Z; Nemeth, A; Vantaggio, S; Fornari, R | |
| Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy | 1-gen-2021 | Bosi M.; Seravalli L.; Mazzolini P.; Mezzadri F.; Fornari R. | |
| Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors | 1-gen-2020 | Stefano Leone; Roberto Fornari; Matteo Bosi; Vincenzo Montedoro; Lutz Kirste; Philipp Doering; Fouad Benkhelifa; Mario Prescher; Christian Manz; Vladimir Polyakov; Oliver Ambacher | |
| Ga(2)O(3)polymorphs: tailoring the epitaxial growth conditions | 1-gen-2020 | Bosi, M; Mazzolini, P; Seravalli, L; Fornari, R | |
| In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3 | 1-gen-2020 | Cora I.; Fogarassy, Z.; Fornari, R.; Bosi, M.; Recnik, A.; Pécz, B. | |
| Gallium Oxide: A Rising Star in the Semiconductor Realm | 1-gen-2019 | Bosi, Matteo; Fornari, Roberto | |
| Progress in MOVPE growth of Ga2O3 | 1-gen-2019 | Fornari, Roberto; Fornari, Roberto | |
| Si and Sn doping of epsilon-Ga2O3 layers | 1-gen-2019 | Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R. |