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Ingots and wafers of semiinsulating Pe-doped InP were submitted to different thermal treatments. The influence that these treatments have on the electrical properties and the uniformity of the wafers was studied using several experimental techniques: Hall effect, chemical photoetching (DSL), Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). The optimal annealing conditions are discussed on the basis of these results.

Influence of the ingot and wafer annealing on the homogeneity of Fe-doped semi-insulating InP wafers

R Fornari;E Gilioli;
1997

Abstract

Ingots and wafers of semiinsulating Pe-doped InP were submitted to different thermal treatments. The influence that these treatments have on the electrical properties and the uniformity of the wafers was studied using several experimental techniques: Hall effect, chemical photoetching (DSL), Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). The optimal annealing conditions are discussed on the basis of these results.
1997
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Defect Recognition and Image Processing in Semiconductors 1997
7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP-VII)
160
157
160
0-7503-0500-2
IOP Publishing Ltd. (Institute of Physics Publishing Ltd)
"Bristol ; London"
REGNO UNITO DI GRAN BRETAGNA
Sì, ma tipo non specificato
Sept. 07-10, 1997
Templin (Germany)
DSL
SPC
SPL
ingot
Conference: 7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP-VII) Location: TEMPLIN, GERMANY Date: SEP 07-10, 1997 Sponsor(s): Deutsch Forsch Gemeinschaft; Freiberger Compound Mat; Gesell Forderung Angewandten Opt Optoelektr Quantenelektr & Spektroskopie EV; Wacker Siltron AG
2
none
M. Avella; J. Jimenez; A. Alvarez; R. Fornari; E. Gilioli; M. Bejar;S. Krawczyk
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/173805
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