By means of X-ray analysis of silicon implanted with 1.5 MeV boron ions, a close correlation was found between the depth profiles of the static atomic disorder and the electronic energy loss, and between the lattice expansion and the nuclear energy loss.
X-ray determination of lattice damage depth-profiles due to electronic and nuclear energy losses in silicon implanted with MeV boron ions
RNipoti;
1992
Abstract
By means of X-ray analysis of silicon implanted with 1.5 MeV boron ions, a close correlation was found between the depth profiles of the static atomic disorder and the electronic energy loss, and between the lattice expansion and the nuclear energy loss.File in questo prodotto:
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