The damage produced by implanting, at room temperature, a 3 mu m thick relaxed Si0.75Ge0.25 layer with 2 MeV Si+ ions has been measured as a function of dose in the range 10(10)-10(15) cm(-2). Depth profiles of the damage have been obtained by both Rutherford Backscattering Spectrometry and Optical Reflectivity Depth Profiling. These measurements show that the levels of damage exceed both those predicted by TRIM and those observed for comparable implantations into Si. Deep Level Transient Spectroscopy of a sample implanted with 10(11) Si cm(-2) reveals the presence of both a majority and a minority carrier trap and another minority carrier trap is detected by Minority Carrier Transient Spectroscopy. An Electron Paramagnetic Resonance signal with isotropic g value of 2.011 +/- 0.001 is detected in samples implanted with greater than or equal to 3 X 10(13) Sicm(-2) and is attributed to both Si and Ge dangling bonds.
Ion implantation induced damage in relaxed Si0.75Ge0.25
RNipoti;
1996
Abstract
The damage produced by implanting, at room temperature, a 3 mu m thick relaxed Si0.75Ge0.25 layer with 2 MeV Si+ ions has been measured as a function of dose in the range 10(10)-10(15) cm(-2). Depth profiles of the damage have been obtained by both Rutherford Backscattering Spectrometry and Optical Reflectivity Depth Profiling. These measurements show that the levels of damage exceed both those predicted by TRIM and those observed for comparable implantations into Si. Deep Level Transient Spectroscopy of a sample implanted with 10(11) Si cm(-2) reveals the presence of both a majority and a minority carrier trap and another minority carrier trap is detected by Minority Carrier Transient Spectroscopy. An Electron Paramagnetic Resonance signal with isotropic g value of 2.011 +/- 0.001 is detected in samples implanted with greater than or equal to 3 X 10(13) Sicm(-2) and is attributed to both Si and Ge dangling bonds.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
