In compound semiconductors the pattern of growth striations is one of the most important parameters revealing the crystal quality. Many techniques, such as X-ray topography, FL, SEM CL and EBIC, are able to reveal striations, but in several cases photoetching has proved to be one of the most simple, cost effective and powerful methods. Results are here given on DSL under different etching conditions for various GaAs substrates and a comparison of sensitivity is made by using a step profiler. Our previous data on the correlation between interface shape and single crystallinity are confirmed.
Growth striation in GaAs as revealed by DSL photoetching
E Gilioli;L Zanotti;
1996
Abstract
In compound semiconductors the pattern of growth striations is one of the most important parameters revealing the crystal quality. Many techniques, such as X-ray topography, FL, SEM CL and EBIC, are able to reveal striations, but in several cases photoetching has proved to be one of the most simple, cost effective and powerful methods. Results are here given on DSL under different etching conditions for various GaAs substrates and a comparison of sensitivity is made by using a step profiler. Our previous data on the correlation between interface shape and single crystallinity are confirmed.File in questo prodotto:
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