We report a simple and efficient algorithm to calculate the growth of damage in Si within the framework of a recently developed Monte Carlo code for the simulation of ion implantation in crystals. We let the defects created by the incoming ions interact, during the simulation, with the damage previously accumulated. We assume this dynamical interaction to depend both on defect generation density and concentration of pre-existing damage. Preliminary comparison of calculations with experimental data in the case of Si samples implanted with 700 keV N+ ions shows that this scheme can well reproduce the observed non-linearities in the growth behavior.
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implamtation of crystalline silicon
RNipoti;
1996
Abstract
We report a simple and efficient algorithm to calculate the growth of damage in Si within the framework of a recently developed Monte Carlo code for the simulation of ion implantation in crystals. We let the defects created by the incoming ions interact, during the simulation, with the damage previously accumulated. We assume this dynamical interaction to depend both on defect generation density and concentration of pre-existing damage. Preliminary comparison of calculations with experimental data in the case of Si samples implanted with 700 keV N+ ions shows that this scheme can well reproduce the observed non-linearities in the growth behavior.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
