High power density UV optical stress for quality evaluation of 4H-SiC epitaxial layers

An application of an optical characterization technique able to evaluate the quality of 4H-SiC epitaxial layers is here proposed. By using high power density UV optical pumping it was possible to stress 4H-SiC epitaxial layers after the CVD growth process and verify the generation and evolution of Single Shockley faults across the interface through the epitaxial layer without the fabrication of bipolar junctions. Thanks to this characterization method, it is possible to choose a good CVD process for the growth of epitaxial layers.