Iron doped InP wafers have been submitted to different thermal treatments. The consequences of these treatments in terms of electrical properties and homogeneity were studied by mean of different experimental techniques: Hall effect, DSL and BCA chemical etching and scanning photocurrent. The electric compensation and the homogeneity are shown to be improved by the thermal treatments. These results are discussed on the bases of donor removal and iron migration to the wafer edges.
Homogeneity of thermally annealed Fe-doped InP wafers
1997
Abstract
Iron doped InP wafers have been submitted to different thermal treatments. The consequences of these treatments in terms of electrical properties and homogeneity were studied by mean of different experimental techniques: Hall effect, DSL and BCA chemical etching and scanning photocurrent. The electric compensation and the homogeneity are shown to be improved by the thermal treatments. These results are discussed on the bases of donor removal and iron migration to the wafer edges.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
