The level of an Fe-doped InP melt in a growth crucible is kept constant throughout a Czochralski growth experiment by replenishing it with undoped melt from a second crucible. Since the distribution coefficient of iron is very small (about 0.001), the Fe concentration in the growth crucible is virtually unchanged during the pulling. As a result the ingot obtained exhibits axial Fe concentration much more uniform than in standard LEC crystals. This growth method can increase the yield of semi-insulating InP wafers as it prevents the accumulation of iron and the formation of precipitates in the last to freeze part of the crystal.
Growth of semi-insulating InP with uniform axial Fe-doping by a double-crucible LEC technique
R Fornari;E Gilioli;A Zappettini;G Mignoni;G Zuccalli
1997
Abstract
The level of an Fe-doped InP melt in a growth crucible is kept constant throughout a Czochralski growth experiment by replenishing it with undoped melt from a second crucible. Since the distribution coefficient of iron is very small (about 0.001), the Fe concentration in the growth crucible is virtually unchanged during the pulling. As a result the ingot obtained exhibits axial Fe concentration much more uniform than in standard LEC crystals. This growth method can increase the yield of semi-insulating InP wafers as it prevents the accumulation of iron and the formation of precipitates in the last to freeze part of the crystal.File in questo prodotto:
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