We report a very simple, robust, and reliable on-chip fabrication method of a chemoresistive sensor based on silicon nanowires (NWs). Our method permits the use of nanowires without the need of their removal and transfer to a support different from the growth substrate. Our method, completely based on the silicon technology platform, exploits nanowires directly grown onto a selected area, over and between pre-patterned, interdigitated electrodes defined on oxidized silicon. The fabricated sensor is capable to detect NO 2 down to a few ppb levels operating at room temperature. The sensor characteristics benefit of the presence of self-welded nanowires.
On-chip fabrication of ultrasensitive NO 2 sensors based on silicon nanowires
Convertino A;Zampetti E;Macagnano A;Pecora A;Fortunato G;Nicotra G;Martelli;
2012
Abstract
We report a very simple, robust, and reliable on-chip fabrication method of a chemoresistive sensor based on silicon nanowires (NWs). Our method permits the use of nanowires without the need of their removal and transfer to a support different from the growth substrate. Our method, completely based on the silicon technology platform, exploits nanowires directly grown onto a selected area, over and between pre-patterned, interdigitated electrodes defined on oxidized silicon. The fabricated sensor is capable to detect NO 2 down to a few ppb levels operating at room temperature. The sensor characteristics benefit of the presence of self-welded nanowires.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.