Metal-Organic Chemical Vapor Deposition (MOCVD) has been applied to the fabrication of BiFeO3 films undoped and doped with Ba or Ti on SrTiO3 (100) and YSZ (100) substrates. The films have been deposited using a multi-metal source, consisting of the Bi(phenyl)(3), Fe(tmhd)(3) and Ba(hfa)(2)center dot tetraglyme or Ti(tmhd)(2)(O-iPr)(2) (phenyl = -C6H5 H-tmhd = 2,2,6,6-tetramethy1-3,5-heptandione; O-iPr = iso-propoxide; H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme = CH3O(CH2CH2O)(4)CH3) precursor mixture. The structural and morphological characterization of films has been carried out using X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). Chemical compositional studies have been performed by energy dispersive X-ray (EDX) analysis. Structural and morphological characterizations point to the formation of homogeneous and flat surfaces for both undoped and doped BiFeO3 films.

BiFeO3 films doped in the A and/or B sites: effects on the structural and morphological properties

R Lo Nigro;
2011

Abstract

Metal-Organic Chemical Vapor Deposition (MOCVD) has been applied to the fabrication of BiFeO3 films undoped and doped with Ba or Ti on SrTiO3 (100) and YSZ (100) substrates. The films have been deposited using a multi-metal source, consisting of the Bi(phenyl)(3), Fe(tmhd)(3) and Ba(hfa)(2)center dot tetraglyme or Ti(tmhd)(2)(O-iPr)(2) (phenyl = -C6H5 H-tmhd = 2,2,6,6-tetramethy1-3,5-heptandione; O-iPr = iso-propoxide; H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme = CH3O(CH2CH2O)(4)CH3) precursor mixture. The structural and morphological characterization of films has been carried out using X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). Chemical compositional studies have been performed by energy dispersive X-ray (EDX) analysis. Structural and morphological characterizations point to the formation of homogeneous and flat surfaces for both undoped and doped BiFeO3 films.
2011
Istituto per la Microelettronica e Microsistemi - IMM
CHEMICAL-VAPOR-DEPOSITION
THIN-FILMS
MOCVD
PRECURSORS
CERAMICS SYSTEM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/181376
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