An analysis of defects in (100) p-type CZ-Si crystal annealed at 1150 degreesC for 16 hours in an O(2) atmosphere has been carried out by the combined use of multi-chroic infrared light scattering tomography (MC-IR-LST) and transmission electron microscopy (TEM). The MC-IR-LST system synchronously takes both the elastic (scattered) and inelastic (photoluminescence) components of the light signal from the sample. In particular, the oxidation induced stacking fault (OSF)-ring has been investigated. Stacking faults with associated precipitates and silicon oxide-related precipitates in the shape of polyhedral defects, that sometimes may be partially empty, have been detected. Additionally, a structure of dark stripes has also been seen by PL in both annealed and as-grown samples, suggesting that they are grown-in defects. The origin of the observed defects is discussed.
MC-IR-LST and TEM combined analysis of defects in the OSF-ring of Cz-silicon crystals
C FRIGERI;
2001
Abstract
An analysis of defects in (100) p-type CZ-Si crystal annealed at 1150 degreesC for 16 hours in an O(2) atmosphere has been carried out by the combined use of multi-chroic infrared light scattering tomography (MC-IR-LST) and transmission electron microscopy (TEM). The MC-IR-LST system synchronously takes both the elastic (scattered) and inelastic (photoluminescence) components of the light signal from the sample. In particular, the oxidation induced stacking fault (OSF)-ring has been investigated. Stacking faults with associated precipitates and silicon oxide-related precipitates in the shape of polyhedral defects, that sometimes may be partially empty, have been detected. Additionally, a structure of dark stripes has also been seen by PL in both annealed and as-grown samples, suggesting that they are grown-in defects. The origin of the observed defects is discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
